Abstract
Examination of Ga2O3 as solid-state nuclear detector was carried out. Ga2O3 is a wide bandgap material with beneficial physical properties that enable its application in harsh environmental conditions, such as elevated temperature or strong electromagnetic field; therefore, Ga2O3 could become a competitor of diamond and 4H silicon-carbide nuclear detectors. Furthermore, because of its high oxygen content the new detector material can play an important role in the field of reactor research due to the 16O(n, $\alpha )^{13}\text{C}$ reaction. Monocrystalline $\beta $ -Ga2O3 samples were investigated under 14 MeV fast neutron irradiation. On unintentionally doped semiconducting and Mg-doped insulating crystals metallic films were deposited in order to form the contact electrodes for biasing and to collect the electron-hole pairs generated by secondary particles after nuclear interactions between neutrons and the nuclei of the Ga2O3 crystal. The Mg-doped sample could be operated from zero up to more than 1000 V biasing level. The recorded electric signal and energy histograms were investigated.
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