Abstract
We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36 nm diameter Al nanoparticles. Extinction spectra of the nanoparticles were measured through spectral transmission measurements. A resonant extinction peak around 300 nm was obtained with Al nanoparticles. These particles gave rise to enhanced absorption in GaN at 340 nm. Spectral responsivity measurements revealed an enhancement factor of 1.5. These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN.
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