Abstract
This report will review recent advancements in LSI and VLSI research in Japan, especially concerning the basic technology useful for microfabrication. The first computer-controlled vector scan electron-beam exposure system in Japan was reported in 1967. Recently, the variable area rectangular technique has been experimentally pursued. Another group is working on probe forming by quadrupole lenses. A raster scan electron system enabling high charge density electron-beam exposure and use of PMMA resist has been designed and constructed. In the processing field, a high-frequency plasma system, a plasma transport system, and a high-pressure oxidation system are under development. Various self-aligning devices, such as diffusion self-alignment, multiple-wall self-alignment, and those which work near punch-through regions are described in this report.
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