Abstract
Low-pressure MOCVD growth of GaAs using trimethylgallium (TMG) and arsine was investigated under conditions of low growth temperatures and low V/III ratios. The growth rate was limited not by the supply rate of TMG but by surface kinetics. Incorporation of carbon atoms was enhanced by decreasing the growth temperature and V/III ratio. GaAs layers with hole concentrations as high as 6×1019 cm-3 were obtained with a V/III ratio near unity. AlGaAs/GaAs heterojunction bipolar transistors with carbon doped GaAs bases were fabricated using this novel growth technique. The diffusion of carbon atoms was so small that a spacer layer, in the base, as narrow as 10Awas found to be sufficiently effective to establish the emitter-base junction.
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