Abstract
X-ray double crystal diffractometry has been used to assess the crystal quality of InGaAsP/ InP single heterostructures grown by liquid phase epitaxy. Diffraction profiles have been obtained in the parallel non-dispersive configuration, using Cu Kα1 radiation, 004 symmetric reflection and a perfect InP crystal as a monochromator. Several structures, with different lattice mismatches, ranging from positive to negative values, have been investigated. The epilayer Bragg peak was found to be as narrow as theoretically predicted, if thickness effects are taken into account. Pendellosung fringes have been observed at the low angle side of the peak, thus the epilayer thickness could be measured. Finally, the sample curvature has been evaluated from the broadening of the substrate Bragg peak and, when the broadening was sufficiently large, a good agreement with that calculated from the elastic theory has been found. All the results demonstrate that the structures investigated are characterized by a very high crystal quality.
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