LPE growth rate in Al xGa 1− xAs system; theoretical and experimental analysis

Abstract

Theoretical results and experimental data on the growth in the Al x Ga 1− x As system are given. The theoretical analysis is based on a diffusion limited growth model considering the diffusion coefficients of Al and As as two parameters. The experimental thickness measurements are carried out over a wide composition range from X A1As = 0 to X A1As = 0.88. The very good agreement between these two sets of results determines D As = 4.4×10 -5 cm 2/s and D A1 = 2.2×10 -4 cm 2/s and thus indicates that the growth in the AlGaAs system is limited by the diffusion of Al and As in the melt.