Abstract
A model for LPE growth of thin layers of InP from supercooled solutions by the two-phase technique is presented. This model relative to the case where the melt is entirely covered by a crystal source is based on the diffusion limited theory for growth and takes into account the temperature dependence of the solute diffusion coefficient. Calculations are performed in two steps: (1) determination of the exact solute concentration profile in the melt before the growth. (2) calculation of the deposited film thickness on the substrate versus time. Theoretical results are given for various sets of experimental parameters: growth temperature, cooling rate, melt thickness, time duration needed for controlling both supercooling and growth. It is demonstrated that this technique enables the control of thin layers grown under moderate supercooled conditions, by means of a proper choice of experimental parameters. Experimental results for InP and quaternary alloys show a fairly good agreement with this model.
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