Abstract
The effect of gravity on both dissolution and growth of GaAs in the GaAs system has been investigated using a horizontal “sandwich” system consisting of a substrate-solution-substrate configuration. Remarkable differences were observed in growth and dissolution between upper and lower substrates. These phenomena were attributed to the solutal convection driven by a concentration gradient. Based on these facts, a layer with a thickness of about 80 μm was successively grown by the yo-yo solute feeding method with 8 yo-yo repetition times between 700 and 650°C.
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