Abstract
A comprehensive study of the variation of layer thickness with growth time for the ternary InGaAs in the diffusion-limited regime is presented. The variation of the layer thickness with growth time has been measured for InGaAs and InGaAs using the step-cooling technique for temperatures between 560 and 640°C. Using the diffusion-limited theory, the diffusion coefficient of arsenic in indium was determined to be D As = 2.67×10 -3 exp(-3.44×10 3 / T l ) cm 2 /s, and the diffusion coefficient of gallium in indium was determined to be D Ga = 7.06×10 -2 exp(-6.018×10 3 / T l )cm 2 /s. Good agreement between the experimental and calculated growth rates for the quaternary In 0.82 Ga 0.18 As 0.40 P 0.60 at 640°C using the diffusion coefficients determined in this work confirms that the LPE growth of the quaternary InGaAsP is satisfactorily described by the diffusion-limited growth theory.
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