Abstract
Hg1-x-yCdxMnyTe crystals have been successfully grown on CdTe substrates for the first time by the LPE method from Hg-rich solutions (x<or=0.4, y<or=0.1). LPE layers exhibit high electron Hall mobilities and excellent compositional uniformity both in the plane and along the growth direction. Such a fact has not been reported for Hg1-xCdxTe. Using the high-quality crystals grown by this method, a new type of magnetophonon effect associated with a recombination process with the emission of two TA phonons was studied in Hg1-x-yCdxMnyTe. From the analysis of experimental results of magnetophonon resonance (MPR) recombination, the band parameters near the band edge are determined precisely. Furthermore, the MPR recombination transitions associated with the impurity level were also detected. An energy gap dependence of the resonant acceptor state has been deduced for a wide range of zero-gap regions.
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