Abstract
Infrared to ultraviolet range ellipsometric spectra of thin film silicon nitride (SiNx) collected from rotating compensator instruments have been analyzed simultaneously. A common complex dielectric function (ε = ε1 + iε2) parameterization from 0.08 to 5.89 eV for amorphous 490 Å thick low pressure chemical vapor deposition SiNx, nominally x = 1.33 Si3N4, on a single crystal silicon (c-Si) wafer is determined. Visible to ultraviolet range electronic transitions at high photon energies and infrared active vibrational modes at low energies are identified.
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