Abstract
The electrical properties of silicon oxynitride (SiO x N y ) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiO x N y films on the basis of frequency analysis of capacitance–voltage and conductance–voltage characteristics of metal–SiO x N y –silicon capacitors in the frequency range 1–300 kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.
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