LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Abstract

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ∼1.2 × 1018 cm−3 and ∼9.5 × 1017 cm−3 with mobilities of ∼72 cm2/V s and ∼42 cm2/V s, respectively.