Abstract
Zinc-blende BxGa1−xAs alloys have been successfully grown on exactly oriented (001)GaAs substrates using triethylboron, trimethylgallium and arsine sources. The growth has been accomplished in a vertical low-pressure metalorganic chemical vapor deposition (LP-MOCVD) reactor. Boron incorporation behaviors have been extensively studied as a function of growth temperature and gas-phase boron mole fraction. The evolution of surface morphology was also observed.The maximum boron composition of 5.8% is obtained at the optimum growth temperature of 580°C. RMS roughness over the surface area of 1×1μm2 is only 0.17nm at such growth conditions. Based on the experimental results, it has been clearly shown that boron incorporation will decrease significantly at higher temperature (>610°C) or at much lower temperature (⩽550°C).
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