Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene)

Abstract

We demonstrate ferroelectric gate thin-film transistors (Fe-TFTs) with very thin (60, 110 nm) ferroelectric polymer poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] and amorphous indium gallium zinc oxide (a-IGZO) as the channel layer on a glass substrate. First, we confirm the basic ferroelectric properties of the 60- and 110-nm-thick-P(VDF–TrFE) films. Next, we fabricate Fe-TFTs with the Al/P(VDF–TrFE) (60 and 110 nm)/a-IGZO (10 nm) top-gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function is confirmed with memory windows of 2.3 and 4.3 V, when the thicknesses of P(VDF–TrFE) were 60 and 110 nm, respectively. In particular, the Fe-TFTs with 60-nm-thick-P(VDF–TrFE) film were operated under 8 V.