Abstract
In this article, nanoscale silver paste was used to double-sided attach Insulated Gate Bipiloar Transistor (IGBT) chips. In order to obtain high bonding strength in double-sided sintered assembly, sintering process of nanoscale silver paste was studied by orthogonal experiment. The shear strength of double-sided sintered joint was analyzed with different factors, e.g., temperature, of sintering process. Die-shearing tests revealed that shear strength of larger than 20 MPa was generated when nanoscale silver was firstly pre-dried at 70°C for 10 mins, secondly heated immediately at 225°C with the help of 3.9-5.1 MPa for 10 mins, and eventually sintered at 300°C for 10 mins. Furthermore, significant plastic flow was observed by Scanning Electronic Microscopy (SEM) in the sheared silver joint which showed relatively high bonding strength.
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