Abstract
Gas molecular‐flow preshowering treatment onto the silicon (Si) substrate surface during the temperature ramp prior to epitaxial Si film formation has been proposed in order to lower the epitaxy process temperature in chemical vapor deposition (CVD). High‐quality phosphorus‐doped Si films have been obtained at 550°C by using molecular‐flow preshowering. The optimum starting temperature of the preshowering has been found to be 520°C. This is nearly equal to the temperature at which thermal desorption causes the coverage of hydrogen terminating the Si surface to drastically decrease. gas molecular‐flow preshowering for phosphorus‐doped Si epitaxy has lowered the process temperature by effectively suppressing oxide growth on the Si substrate surface during the temperature ramp prior to epitaxial growth.
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