Abstract
The paper presents the results of a study focused on the effect of low-temperature RF plasma treatment on the operation of In0.53Ga0.47As channel MOSFETs fabricated using a junctionless design. Plasma annealing was found to substantially improve the source/drain contacts leading to a sharp increase of ON-state current of the transistors. The effect of RF plasma on threshold voltage and on the distribution of the density of interface states within the semiconductor bandgap is also reported.
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