Abstract
Preferentially (105)-oriented Sr/sub 0.7/Bi/sub 2.8/Ta/sub 2/O/sub 9/ thin films on SiO/sub 2//n-Si(100) have been prepared by laser ablation at low temperature as low as 350/spl deg/C, which is the lowest process temperature for growing a SBTO ferroelectric thin film. Dielectric properties of the SBTO film have been improved by increasing Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. A memory window of as large as 3.6 V in the MFOS capacitor has been obtained at the Sr/Bi of 0.7/2.0 and is the largest value in the MF(I)S diode structures. Also little C-V degradation is observed for Sr/Bi of 0.7/2.0 up to fatigue cycle over 10/sup 10/, keeping memory window of more than 3.2 V. It should be emphasized that improvement in memory characteristics is strongly related to insulating properties of the ferroelectric and dielectric thin films rather than its value of dielectric constant.
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