Abstract
Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF 4 -Ar-H 2 feedstock. In all cases, stable top gate TFT with mobility values around 1 ctn 2 /V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reache stable values of around 3 cm 2 /V.s.
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