Low-Temperature Photomagnetoelectric Properties of Gold-Dopedn-Type Silicon

Abstract

The photomagnetoelectric (PME) effect was observed between 21 and 84\ifmmode^\circ\else\textdegree\fi{}K in silicon doped with gold and phosphorus. A generalized diffusion equation is formulated and solved with the impurity centers included in the charge-balance equation and arbitrary intensity of steady illumination. When the carrier densities are much smaller than the gold density, the charged impurities maintain charge neutrality, and this results in a range of injection where $\ensuremath{\Delta}p={\ensuremath{\Gamma}}_{1}\ifmmode\times\else\texttimes\fi{}\ensuremath{\Delta}n+{\ensuremath{\Gamma}}_{2}\ensuremath{\Delta}{n}^{2}$. If the quadratic term dominates, the PME current is proportional to the $\frac{4}{3}$ power of the photoconductance. This power law is observed in our measurements, from which we deduce values for the product $\ensuremath{\gamma}_{\frac{1}{2}}^{\frac{1}{2}}{\ensuremath{\tau}}_{n}$ between 36 nsec and 63 \ensuremath{\mu}sec.