Abstract
Investigations of low-temperature photoluminescence were carried out on Cd 1− x Mn x Te films grown by pulsed laser evaporation and epitaxy on nominally GaAs(111), nominally Cd 1−yZn yTe(001) substrates, and Cd 1−yZn yTe(001) vicinal substrates. Excitonic and impurity related transitions were clearly identified in the photoluminescence spectra. Very narrow exciton peaks with full width at half maximum of less than 10 meV show that high-quality films can be produced with this growth technique. Our results suggest that the extrinsic luminescence peaks originate from the accumulation of defects or impurities at the different interfaces.
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