Abstract
Germanium (Ge) is one of the candidates for the next-generation thin-film transistors (TFTs) for the backplane of a flat panel display because of the superior electrical properties of bulk Ge compared to those of silicon (Si) and oxide semiconductors. In this study, low-temperature (LT), metal double-gate (MeDG), junctionless (JL), p-channel (p-ch) polycrystalline-Ge (poly-Ge) TFTs were fabricated on a glass substrate and successfully operated with a high on-off ratio compared to that of LT, top-gate, JL, p-ch poly-Ge TFTs.
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