Abstract
The overall project goal is to understand the fundamental gas phase, and surface and interface science issues relevant to low-temperature (T< 600 C) synthesis of polycrystalline silicon films on low-cost (e.g., glass) substrates. This understanding will be used to delineate the path to break through existing barriers to high-rate synthesis of high-quality thin films for polycrystalline silicon photovoltaic applications. In this context,''high quality P'' refers to large grain size (> film thickness) and long (> film thickness) minority-carrier diffusion length.
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