Abstract
ABSTRACTHfO2 dielectric layers have been grown on p -type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t -butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission spectroscopy (OES) and quadrupolar mass spectrometry (QMS).Structural and optical properties of the HfO2 layers and of the HfO2/Si interface are investigated by spectroscopic ellipsometry (SE) in the photon energy range 1.5–6.0 eV‥ SE data are corroborated by results obtained from glancing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).The effect of the substrate temperature (RT-250°C) and precursor flow on the thickness of interfacial SiO2 layer and on the HfO2 microstructure is investigated. The growth dynamics of HfO2 film and SiO2 interface layer is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.