Abstract
Epitaxial LiNbO3 films were grown on sapphire (0001) substrates using pulsed laser deposition. A single-crystal LiNbO3 was used as a target. Growth behaviors of the LiNbO3 films deposited at various deposition conditions such as temperature, oxygen pressure, and annealing condition were studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the LiNb3O8 phase: formation of the Li deficient phase can be suppressed by depositing the films at temperature below 500 °C. Oxygen pressure during deposition influences crystallographic orientations of the films. An x-ray pole figure shows that epitaxial LiNbO3 film was grown, but with twin boundaries. The ordinary refractive index of the film was found to be 2.28, which is in good agreement with the bulk value.
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