Abstract
Polycrystalline silicon (polysilicon) films are deposited on thermally oxidized silicon above 250 °C by pyrolyzing silane by a tungsten heater. The deposition rate and the structure of the polysilicon films are a function of substrate temperature, heater current, and total pressure. Polysilicon films deposited at 340 and 450 °C have 〈110〉 and 〈100〉 preferred orientations. Films deposited at other temperatures have no preferred orientations. The resistivity varies in a range of 4×107–5×10−4 Ω cm as the heater current increases from 19 to 24 A. Lower resistivities are caused by the fact that tungsten evaporating from the heater during deposition is doped into the polysilicon.
Published Version
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