Low-temperature epitaxial growth of β-SiC by multiple-energy ion implantation

Abstract

A cubic silicon carbide (\ensuremath{\beta}-SiC) buried layer was synthesized in Si(111) using a combination of multienergy carbon ion implantation at room temperature and post-thermal annealing. The crystal structure and the crystalline quality of the \ensuremath{\beta}-SiC layer was identified by x-ray diffraction in the \ensuremath{\theta}--2\ensuremath{\theta} mode and was examined by pole figure measurement of x-ray diffraction. Interestingly, by using the multienergy implantation technique, the \ensuremath{\beta}-SiC buried layer showed epitaxial growth at annealing temperatures as low as 400 \ifmmode^\circ\else\textdegree\fi{}C. At an annealing temperature of 800 \ifmmode^\circ\else\textdegree\fi{}C, the x-ray pole figures show that the \ensuremath{\beta}-SiC buried layer has a near-perfect epitaxial relationship with the silicon substrate.