Abstract
Undoped and Co-doped ZnO nanorod sensors were fabricated at a low temperature of about 90 °C. ZnO-based sensors exhibit fast response and high sensitivity. Co-doped ZnO sensors show improved sensitivity compared with undoped ZnO. The electrodeposition method is an economic, effective approach and suitable for large-scale production. This approach of adding impurity into semiconductor is effective in improving sensing property and can be applied to other semiconductors as well.
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