Abstract
Zinc oxide (ZnO) film deposition using a plasma-assisted mist chemical vapor deposition (CVD) with an inductively-coupled plasma source has been performed and the effects of the plasma exposure on film properties have been investigated with oxygen mixture ratio as a parameter. With increasing oxygen mixture ratio to Ar+O2(10%), the X-ray diffraction (XRD) results showed evident peaks of ZnO(0002), indicating that highly c-axis-oriented films were grown at low substrate temperatures below 200 °C. The deposition rate of ZnO films was as high as 100 nm/min. ZnO films with an optical transmittance of 75% for the visible region and a band gap energy of 3.32 eV have been obtained by using plasma-assisted mist CVD.
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