Abstract
It is shown how remote plasma-enhanced chemical vapor deposition (remote PECVD) and reactive magnetron sputtering (RMS) can be adopted to limit the relative fraction of polyhydride bonding groups for low substrate temperature depositions (Ts < 200 °C) of a-Si:H. These process modifications provide new options for the processing of device structures by combinations of low-temperature deposition and post-deposition, short-term thermal annealing. It is shown for several different deposition processes, including conventional glow-discharge deposition (GD), RMS, and remote PECVD, that the distribution of bonded hydrogen between monohydride and polyhydride bonding groups is determined by the total amount of bonded hydrogen [H] in the film and is not intrinsically related to Ts, or any other deposition parameter. A statistical model is presented, which provides a basis for translating process-dependent representations of data for the relative monohydride and polyhydride fractions to a universally obeyed scaling relationship in which the independent variable is [H]. Finally, selected properties of low-Ts films formed by RMS and remote PECVD are briefly discussed.
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