Low-phonon rare-earth doped GaGe-based chalcogenide glasses for mid-IR laser gain materials

Abstract

A large number of rare-earth (RE) activated materials have been investigated to develop new solid state infrared (IR) laser sources for potential applications in atmospheric sensing, material processing, laser remote sensing, medicine, and free space communications. RE3+-doped low-phonon chalcogenide glasses have shown efficient mid-IR emission as well as lasing at room temperature. In this work, we report the results of a comparative study of mid-IR spectroscopic properties of RE3+ doped chalcogenide glasses (e.g. GaGeX (X= S, Se)) aimed at exploring their potential for efficient mid-IR laser operation.