Abstract
This paper describes the design and measurements of two different low-noise amplifiers (LNA) targeted for WCDMA base-station applications. The LNAs are designed to have two gain settings, which are optimized for different base-station configurations. Both designs are implemented using the same 0.25 ?m SiGe BiCMOS process, and both designs achieve in high gain mode the NF of 1 dB and IIP3 of -5 dBm.
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