Low-Loss and Wideband Package Transitions for Microwave and Millimeter-Wave MCMs

Abstract

This paper presents high-performance flip-chip, through-substrate via and board-level BGA transition designs applicable in microwave and millimeter-wave multichip module (MCM) assemblies. Full-wave electromagnetic analysis was performed to achieve optimized transition structures. Interconnection test structures were fabricated in ceramic substrates and their performance was validated using on-wafer scattering parameter measurements. Both the flip-chip transition and the through-substrate via transition with a height of 800 mum exhibited return losses better than 25 dB and 20 dB, respectively, with low transmission losses up to 50 GHz. Furthermore, the wideband board-level BGA transition with a standoff height of 500 showed low insertion loss (< 0.5 dB) over a wide frequency range, from direct current (dc) up to 32.5 GHz.