Abstract
Pure thin films of organotin compounds have been lithographically evaluated using extreme ultraviolet lithography (EUVL, 13.5 nm). Twenty-one compounds of the type R<sub>2</sub>Sn(O<sub>2</sub>CR’)<sub>2</sub> were spin-coated from solutions in toluene, exposed to EUV light, and developed in organic solvents. Exposures produced negative-tone contrast curves and dense-line patterns using interference lithography. Contrast-curve studies indicated that the E<sub>max</sub> values were linearly related to molecular weight when plotted separately depending upon the hydrocarbon group bound directly to tin (R = butyl, phenyl and benzyl). Additionally, E<sub>max</sub> was found to be linearly related to free radical stability of the hydrocarbon group bound directly to tin. Dense-line patterning capabilities varied, but two resists in particular show exceptionally good line edge roughness (LER). A resist composed of an amorphous film of (C<sub>6</sub>H<sub>5</sub>CH<sub>2</sub>)<sub>2</sub>Sn(O<sub>2</sub>CC(CH<sub>3</sub>)<sub>3</sub>)<sub>2</sub> (13) achieved 1.4 nm LER at 22 nm half-pitch patterning and a resist composed of (C<sub>6</sub>H<sub>5</sub>CH<sub>2</sub>)<sub>2</sub>Sn(O<sub>2</sub>CC<sub>6</sub>H<sub>5</sub>)<sub>2</sub> (14) achieved 1.1 nm LER at 35 nm half-pitch at high exposure doses (600 mJ/cm<sup>2</sup>). Two photoresists that use olefin-based carboxylates, (C<sub>6</sub>H<sub>5</sub>CH<sub>2</sub>)<sub>2</sub>Sn(O<sub>2</sub>CCH=CH<sub>2</sub>)<sub>2</sub> (11) and (C<sub>6</sub>H<sub>5</sub>CH<sub>2</sub>)<sub>2</sub>Sn(O<sub>2</sub>CC(CH<sub>3</sub>)=CH<sub>2</sub>)<sub>2</sub> (12), demonstrated much improved photospeeds (5 mJ/ cm<sup>2</sup> and 27 mJ/cm<sup>2</sup>) but with worse LER.
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