Abstract
To reduce the lattice strain of 1.3 µm-range quantum well lasers on GaAs substrates, symmetric and type-II coupled double quantum wells with a GaAs/GaInAs/GaAsSb/GaInAs/GaAs layer structure were grown by molecular beam epitaxy. By using a `type II' band lineup, net lattice strain in the quantum well layers could be reduced to about 1.6% while maintaining a constant wavelength. Photoluminescence measurements on these quantum well layers revealed a linewidth of 50 meV at a 1.3-µm wavelength at room temperature and small dependence of peak wavelength on excitation power.
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