Abstract
Low-frequency shot noise and dc current profiles for a double-barrier resonant-tunnelling structure (DBRTS) under a strong magnetic field applied perpendicular to the interfaces have been studied. Structures with a 3D and 2D emitter have both been considered. The calculations, carried out with the Keldysh Green's function technique, show strong dependencies of both the current and noise profiles on the bias voltage and magnetic field. The noise spectrum appears sensitive to charge accumulation due to barrier capacitances, and both noise and dc current are extremely sensitive to the Landau level broadening in the emitter electrode and can be used as a powerful tool to investigate the latter. As an example, two specific shapes of the level broadening have been considered - a semi-elliptic profile resulting from the self-consistent Born approximation, and a Gaussian one resulting from the lowest-order cumulant expansion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
