Abstract
Strong 1/ f γ resistance noise is observed in the insulating phase in a two-dimensional electron system in high-mobility silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). The noise power increases with decreasing temperature. This suggests the formation of the electron glass at low carrier densities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
