Abstract
Low-frequency noise measurements are reported on small InGaAs/InP p-i-n photodiodes under different bias and illumination conditions. In the first experiment measurements were taken when the diodes were reverse biased and illuminated with incandescent light. At high frequencies the noise is shot noise and at low-frequencies the noise has a spectrum proportional to fγ with γ=−1.0 for one set of two devices and γ=−0.8 for another set of two devices. At low-frequencies the spectral noise intensity is proportional to the current squared. In a second experiment the diodes were forward biased (no illumination) and the spectral intensity of the low-frequency noise was proportional to the current. Under these bias conditions it was possible to extract the parameter αH. The obtained values for this parameter are not compatible with quantum 1/f noise but do seem to coincide with values related to 1/f noise due to recombination centers.
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