Abstract
The low‐frequency noise in SOI MOSFETs is studied experimentally and by numerical simulations. The behaviors of devices with completely depleted and partially depleted silicon film are investigated for various substrate biases. The importance of volume inversion in thin Si film is underlined. Moreover, the variations of the current noise around the kink is analyzed for thin and thick film devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have