Abstract
The current-voltage characteristics and the low-frequency noise spectra of p-type Si - Porous Si - Al light emitting diodes were investigated. over 1 V forward biases a reasonable fit was obtained in the Fowler-Nordheim plot. At lower biases, however, an additional current-component appears, which shows a saturating character. This current component is ascribed to trap-assisted tunneling. Any attempts of accurately fitting the I-V characteristic by other known transport mechanisms failed, as reported earlier. The measured noise spectra show 1/f character. While the biasing current was varied from a about 30 microAmps up to several mAs, the noise level remained constant within the measuring error, i.e. the voltage noise is independent of the bias. This is contradictory to the results obtained on uniform resistors, where the noise power scales with I2, or V2. On this reason the observed noise is attributed to the saturating trap-assisted tunneling.
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