Low-frequency noise in non-homogeneously doped semiconductor

Abstract

The possibility of usage of theoretically predicted additional 1/ f noise component, conditioned by presence of the built-in electric field, for the reliability estimation of semiconductor based sensors and as a tool for the gas recognition is discussed. For non-homogeneously doped n-type semiconductor, at presence of external crossed magnetic and electric fields, it is shown that the values of the Hooge parameter analog of the longitudinal component of the additional 1/ f noise component, at low temperatures, from 77 to 150 K, can be equal to corresponding Hooge parameter of the generally observed 1/ f noise. Approximately linear dependence of this parameter analog on the intensity of the built-in electric field is reported, references to the corresponding observations of such linear dependence are given. Recommendations for gas sensor applications, basing on the already developed model of origin of the additional 1/ f component are suggested.