Low-frequency noise in graphene field-effect transistors

S Rumyantsev,M S Shur,V Yu Kachorovskii,W Stillman,G Liu,A A Balandin

doi:10.1109/icnf.2011.5994311

Low-frequency noise in graphene field-effect transistors

S Rumyantsev, M S Shur + Show 4 more

https://doi.org/10.1109/icnf.2011.5994311

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Publication Date: Jun 1, 2011

Citations: 6

Affiliation: Rensselaer Polytechnic Institute, Ioffe Institute, University of California, Riverside

#Noise In Graphene #Noise In Graphene Transistors + Show 8 more

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Abstract

The low frequency noise has been studied in mechanically exfoliated single- and bilayer graphene deposited on Si/SiO 2 substrates. Measurements were performed in 2- and 4-probe configuration schemes. The analysis of the gate voltage dependences of noise showed that noise in graphene transistors does not comply with the McWhorter model. Aging of graphene transistors due to exposure to ambient resulted in increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The model linking noise in graphene to the mobility fluctuations is discussed.

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