Year-end Sale % OFF 
Abstract
This work reports the study of low-frequency electrical noise in Gallium Arsenide (GaAs) resistor and MESFET structures. The current and frequency dependence of the noise was found to indicate the presence of at least two physical mechanisms. The identified mechanisms are time constant related diffusion noise and trapping/detrapping by a mechanism having a distribution of time constants with a lower limit on the distribution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
