Abstract
We report on the results of measurements of temperature dependent Hall-effect and low-frequency noise of molecular-beam-epitaxy-grown n-GaAs layers irradiated by 3 MeV electrons. The results of Hall-effect measurements agree with the literature for the electron traps E1 and E2. Besides 1/f noise, an additional generation-recombination (g-r) noise is observed. We attribute the observed g-r noise to an unknown deep level induced by the electron irradiation, which is about 0.18 eV below the conduction band. Its capture cross section is extremely small and thermally activated. The irradiation does not cause a significant change in the 1/f noise parameter α at high temperatures. Possible roles of the defect motion 1/f noise sources are discussed.
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