Abstract
Bismuth lanthanum titanate (Bi3:25La0:75Ti3O12, BLT) and Nb-doped bismuth lanthanum titanate (Bi3:25La0:75Ti2:95Nb0:05O12, BLTN) were prepared by using a solid state reaction method. The e ects of Nb ion doping on the dielectric property and on the impedance spectroscopy were investigated by using a dielectric dispersion and complex impedance plot, respectively. Nb doping of BLT decreased the low-frequency dielectric dispersion and the electrical conductivity, which indicates that the defects created by Bi volatilization decreased. In addition, the complex impedance plot of BLTN ceramics exhibited one semicircle; the impedance relaxation is explained by the bulk properties of the grains. The e ects of Nb doping on the low-frequency dielectric dispersion and the impedance relaxation are explained by a contribution of ion doping.
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