Abstract
Electron drift and Hall mobility, and thermoelectric power in In 1-x Ga x As y P 1-y , lattice-matched to InP, are calculated for different temperatures and compositions. The two-mode nature of the polar optic phonons is considered jointly with deformation-potential acoustic, piezoelectric, alloy, ionized-impurity, and electron-electron scattering. Band nonparabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. The Boltzmann equation is solved by an iterative method using the currently established values of the material parameters. The agreement with the available experimental data is found to be satisfactory.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
