Abstract
Electrically active defects of the buried oxide in SIMOX (separation by implantation of oxygen) material have received relatively little attention. In an effort to gain further understanding of these defects, the authors investigated the effect of constant bias stressing on SIMOX buried oxides. The results show that damage from electron injection can be significant for electric fields of only 2 MV/cm. For low implant dose material, enhanced electron injection from the film/buried oxide interface is seen. For this material, there is also a net negative trapped charge and generation of interface traps at both buried oxide interfaces. For standard dose material, the net trapped charge is positive, and is only seen at the substrate/buried oxide interface. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
