Abstract
The effects of hydrogen doping on the optical and electrical properties of zinc oxide (ZnO) films were investigated. We prepared about 50-nm thick ZnO films on a sapphire substrate by using a pulsed laser deposition method and used a pulse-modulated inductively coupled plasma technique (PM-ICP) to intentionally insert hydrogen into the films. An increase in the electron concentration by hydrogen doping indicated that hydrogen is actually a cause of shallow donors. Moreover, the excitation intensity threshold for optically pumped stimulated emissions was significantly reduced after hydrogen doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
