Abstract
Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi2Ta2O9(SBT)/HfO2/Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH3 at various temperatures in the range 950–1150 °C. The electrical properties of the Pt/SBT/HfO2/SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO2 gate stacks formed on Si substrates subjected to various treatments: SiNx/Si formed by RTN, SiO2/Si formed by RTO and untreated Si. The Pt/SBT/HfO2/SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C.
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